Silicon Carbide (SiC) Substrates

Product Details

Product Description

Product Description
Silicon Carbide(SiC) has become a promising material in semi-conductor industry, due to the development of SiC material manufacturing and the decrease of the cost in recent years.
Silicon Carbide (SiC) is a wide bandgap material and is the typical representative of the third-generation semiconductor materials. Due to the wide bandgap, high thermal conductivity, high saturated carrier mobility, high threshold breakdown electric field strength, and high chemical stability, it is an ideal substrate for the fabrication of power electronics and radio frequency devices operating at extreme environments, such as high temperature, high frequency, high power, and strong radiation. Therefore, SiC has extensive applications in white-light illumination, automobile electronic, radar communication, aeronautic and aerospace, and nuclear radiation.
We have the ability to make processing, like cutting, drilling, dicing, polishing, etc. We have rich experiences on the micro-machining on the hard but brittle materials.
PROCESSING CAPABILITIESCut/Drill/Dicing/Engraving/Marking as well as induced etching
Any required shape customization
Not only SiC substrate and SiC wafer, but also processed wafer machining available
SiC thickness: 0~10mm
Min hole size: 0.05mm
Min feature size(etching,depth,etc) : 10um