Enhancement Mode N-Channel Power IGBT

Product Description

Product Description
General Description
OST30N65FMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high-range switching frequency converters.
Features
. Advanced TGBTTM technology
. Excellent conduction and switching loss
. Excellent stability and uniformity
. Fast and soft antiparallel diode
Applications
. PV inverters
. Induction converters
. Uninterruptible power supplies
Key Performance Parameters

Parameter	Value	Unit
VCES, min @ 25°C	650	V
Maximum junction temperature	175	°C
IC, pulse	120	A
VCE(sat), typ @ VGE=15V	1.5	V
Qg	54	nC

Marking Information

Product Name	Package	Marking
OST30N65FMF	TO220F	OST30N65FM

Package & Pin Information

Absolute Maximum Ratings at Tvj=25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Collector emitter voltage	VCES	650	V
Gate emitter voltage	VGES	±20	V
Transient gate emitter voltage, TP≤10µs, D<0.01		±30	V
Continuous collector current1) , TC=25ºC	IC	42	A
Continuous collector current1) , TC=100ºC		30	A
Pulsed collector current2) , TC=25ºC	IC, pulse	120	A
Diode forward current1) , TC=25ºC	IF	42	A
Diode forward current1) , TC=100ºC		30	A
Diode pulsed current2) , TC=25ºC	IF, pulse	120	A
Power dissipation3) , TC=25ºC	PD	188	W
Power dissipation3) , TC=100ºC		94	W
Operation and storage temperature	Tstg, Tvj	-55 to 175	°C
Short circuit withstand time VGE=15 V, VCC≤400 V Allowed number of short circuits<1000 Time between short circuits:≥1.0 S	tSC	5	μs

Thermal Characteristics

Parameter	Symbol	Value	Unit
IGBT thermal resistance, junction-case	RθJC	0.8	°C/W
Diode thermal resistance, junction-case	RθJC	1.65	°C/W
Thermal resistance, junction-ambient	RθJA	65	°C/W

Electrical Characteristics at Tvj=25°C unless otherwise specified

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Collector-emitter breakdown voltage	V(BR)CES	650			V	VGE=0 V, IC=0.5 mA
Collector-emitter saturation voltage	VCE(sat)		1.5	1.63	V	VGE=15 V, IC=30 A Tvj=25°C
			1.7		V	VGE=15 V, IC=30 A, Tvj =125°C
			1.8			VGE=15 V, IC=30 A, Tvj =175°C
Gate-emitter threshold voltage	VGE(th)	4.5		5.5	V	VCE=VGE , ID=0.5 mA
Diode forward voltage	VF		1.75	1.9	V	VGE=0 V, IF=30 A Tvj =25°C
			1.64			VGE=0 V, IF=30 A, Tvj =125°C
			1.57			VGE=0 V, IF=30 A, Tvj =175°C
Gate-emitter leakage current	IGES			100	nA	VCE=0 V, VGE=20 V
Zero gate voltage collector current	ICES			10	μA	VCE=650 V, VGE=0 V

Dynamic Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Input capacitance	Cies		3114		pF	VGE=0 V, VCE=25 V, ƒ=100 kHz
Output capacitance	Coes		65		pF
Reverse transfer capacitance	Cres		2.1		pF
Turn-on delay time	td(on)		25		ns	VGE=15 V, VCC=400 V, RG=10 Ω, IC=30 A
Rise time	tr		31		ns
Turn-off delay time	td(off)		85		ns
Fall time	tf		77		ns
Turn-on energy	Eon		0.84		mJ
Turn-off energy	Eoff		0.61		mJ
Turn-on delay time	td(on)		23		ns	VGE=15 V, VCC=400 V, RG=10 Ω, IC=15 A
Rise time	tr		13		ns
Turn-off delay time	td(off)		119		ns
Fall time	tf		52		ns
Turn-on energy	Eon		0.38		mJ
Turn-off energy	Eoff		0.34		mJ

Gate Charge Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Total gate charge	Qg		54		nC	VGE=15 V, VCC=520 V, IC=30 A
Gate-emitter charge	Qge		26		nC
Gate-collector charge	Qgc		10		nC

Body Diode Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Diode reverse recovery time	trr		91		ns	VR =400 V, IF=30 A, diF/dt=500 A/μs Tvj = 25°C
Diode reverse recovery charge	Qrr		678		nC
Diode peak reverse recovery current	Irrm		14.5		A

Note
1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.

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